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PD - 9.1137
IRGPH20M
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Short Circuit Rated Fast IGBT
VCES = 1200V VCE(sat) 4.6V
@VGE = 15V, I C = 4.5A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
1200 6.9 4.5 14 14 10 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V A
s V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- --
Typ.
-- 0.24 -- 6 (0.21)
Max.
2.1 -- 40 --
Units
C/W g (oz)
C-463
Revision 1
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IRGPH20M
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 1.3 -- V/C VGE = 0V, I C = 1.0mA -- 3.1 4.6 IC = 4.5A V GE = 15V -- 3.9 -- V IC = 6.9A See Fig. 2, 5 -- 4.0 -- IC = 4.5A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 1.3 2.6 -- S VCE = 100V, I C = 4.5A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 1000 VGE = 0V, V CE = 1200V, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 16 24 IC = 4.5A 4.4 7.0 nC VCC = 400V See Fig. 8 5.5 8.3 VGE = 15V 26 -- TJ = 25C 13 -- ns IC = 4.5A, V CC = 960V 43 65 VGE = 15V, R G = 50 430 640 Energy losses include "tail" 0.33 -- 0.78 -- mJ See Fig. 9, 10, 11, 14 1.1 1.7 -- -- s VCC = 720V, T J = 125C VGE = 15V, R G = 50, VCPK < 1000V 32 -- TJ = 150C, 20 -- ns IC = 4.5A, V CC = 960V 480 -- VGE = 15V, R G = 50 450 -- Energy losses include "tail" 2.4 -- mJ See Fig. 10, 14 13 -- nH Measured 5mm from package 340 -- VGE = 0V 25 -- pF VCC = 30V See Fig. 7 4.7 -- = 1.0MHz
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IRGPH20M
12
F o r b o th :
T ria n g u la r w a v e :
9
Load Current (A)
D uty c y cle: 50% TJ = 125C T sink = 90 C G ate driv e as spe c ified P o w e r D is s ip a tio n = 1 5 W S q u a re w a v e :
C la m p v o lta g e : 8 0 % o f ra te d
6
6 0 % o f ra te d v o lta g e
3
Id ea l d io d e s
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
10
T = 25C J TJ = 150C
TJ = 25C TJ = 150C
10
1
0.1 1
VGE = 15V 20s PULSE WIDTH A
10
1 5 10
VCC = 100V 5s PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGPH20M
8
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V
15
VGE = 15V 80s PULSE WIDTH
12
6
I C = 9.0A
9
4
6
I C = 4.5A
3
2
IC = 2.3A
0 -60 -40 -20 0 20 40 60 80
0 25 50 75 100 125
A
150
A
100 120 140 160
TC , Case Temperature (C)
TC, Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T herm al Response (Z thJ C )
1
D = 0.50
0 .2 0 0 .10 0.0 5
PD M
0.1
0.0 2 0 .01
t
SIN G LE P U LS E (TH ER M AL R E SP O N SE )
N o te s : 1 . D u ty fa c to r D = t 1 /t 2
1 t2
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGPH20M
600
500
VGE , Gate-to-Emitter Voltage (V)
A
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
VCE = 400V I C = 4.5A
16
C, Capacitance (pF)
Cies
400
12
300
Coes
200
8
100
Cres
4
0 1 10
0 0 4 8 12 16
A
20
100
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1.10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC VGE TC IC
= 960V = 15V = 25C = 4.5A
10
RG = 50 V GE = 15V V CC = 960V
I C = 9.0A
I C = 4.5A I C = 2.3A
1
1.08
1.06
1.04 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80
A 100 120 140 160
R G , Gate Resistance ()
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
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IRGPH20M
6.0
Total Switching Losses (mJ)
5.0
IC , Collector-to-Emitter Current (A)
RG TC V CC V GE
= 50 = 150C = 960V = 15V
100
VGE = 20V TJ = 125C
10
4.0
SAFE OPERATING AREA
1
3.0
2.0
0.1
1.0
0.0 0 2 4 6 8
A
10
0 1 10 100 1000
A
10000
I C , Collector-to-Emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13
C-468
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